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Volumn 5, Issue 4, 1986, Pages 645-652

MONTE: A Program to Simulate the Heterojunction Devices in Two Dimensions

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; MATHEMATICAL TECHNIQUES - FINITE DIFFERENCE METHOD; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

EID: 0022790634     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/TCAD.1986.1270234     Document Type: Article
Times cited : (25)

References (27)
  • 1
    • 0019596416 scopus 로고
    • Finite-element analysis of semiconductor devices: The Fielday program
    • E. M. Buturla P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, “Finite-element analysis of semiconductor devices: The Fielday program,” IBM J. Res. Develop., vol. 25, pp. 218–231, 1981.
    • (1981) IBM J. Res. Develop. , vol.25 , pp. 218-231
    • Buturla, E.M.1    Cottrell, P.E.2    Grossman, B.M.3    Salsburg, K.A.4
  • 2
    • 0022062238 scopus 로고
    • Animation and 3D color display of multiple-variable data: Application to semiconductor design
    • E. J. Farrell, S. E. Laux, P. L. Corson, and E. M. Buturla “Animation and 3D color display of multiple-variable data: Application to semiconductor design,” IBM J. Res. Develop., vol. 29, pp. 302–315, 1985.
    • (1985) IBM J.Res. Develop. , vol.29 , pp. 302-315
    • Farrell, E.J.1    Laux, S.E.2    Corson, P.L.3    Buturla, E.M.4
  • 7
    • 36749114655 scopus 로고
    • A generalized approximation of the Fermi-Dirac integrals
    • X. Aymerich-Humet, F. Serra-Mestres, and J. Millan “A generalized approximation of the Fermi-Dirac integrals,” J. Appl. Phys., vol. 54, no. 5, 2850–2851, 1983.
    • (1983) J. Appl. Phys. , vol.54 , Issue.5 , pp. 2850-2851
    • Aymerich-Humet, X.1    Serra-Mestres, F.2    Millan, J.3
  • 8
    • 0021468632 scopus 로고
    • Non-uniform surface potentials and their observation by surface sensitive techniques
    • J. Y.-F. Tang and J. L. Freeouf, “Non-uniform surface potentials and their observation by surface sensitive techniques,” J. Vac. Sci. Technol., vol. B2, pp. 459–464, 1984.
    • (1984) J. Vac. Sci. Technol. , vol.B2 , pp. 459-464
    • Tang, J.Y.-F.1    Freeouf, J.L.2
  • 9
    • 84916430884 scopus 로고
    • A self-consistent iterative scheme for one-dimensional steady state transistor calculations
    • H. K. Gummel, “A self-consistent iterative scheme for one-dimensional steady state transistor calculations,” IEEE Trans. Electron Devices, vol. ED-110, pp. 455–465, 1964.
    • (1964) IEEE Trans. Electron Devices , vol.ED-110 , pp. 455-465
    • Gummel, H.K.1
  • 11
    • 0000564676 scopus 로고
    • Iterative solution of implicit approximations of multidimensional partial differential equations
    • H. L. Stone, “Iterative solution of implicit approximations of multidimensional partial differential equations,” SIAM J. Numer. Anal., vol. 5, no. 3, pp. 530–558, 1968.
    • (1968) SIAM J. Numer. Anal. , vol.5 , Issue.3 , pp. 530-558
    • Stone, H.L.1
  • 13
    • 0017482945 scopus 로고
    • A computer analysis of heterojunction and graded composition solar cell
    • J. E. Sutherland and J. R. Hauser, “A computer analysis of heterojunction and graded composition solar cell,” IEEE Trans. Electron Devices, vol. 1977.
    • (1977) IEEE Trans. Electron Devices
    • Sutherland, J.E.1    Hauser, J.R.2
  • 14
    • 84916389355 scopus 로고
    • Large-signal analysis of a silicon Read diode oscillator
    • D. L. Scharfetter and H. K. Gummel, “Large-signal analysis of a silicon Read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, pp. 64–77, Jan., 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 64-77
    • Scharfetter, D.L.1    Gummel, H.K.2
  • 15
    • 5244375949 scopus 로고
    • High field temperature dependent electron drift velocity in GaAs
    • T. H. Windhorn, T. J. Roth, L. M. Zinkiewicz, O. L. Gaddy, and G. E. Stillman, “High field temperature dependent electron drift velocity in GaAs,” Appl. Phys. Lett., vol. 40, no. 6, pp. 513–515, Mar. 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , Issue.6 , pp. 513-515
    • Windhorn, T.H.1    Roth, T.J.2    Zinkiewicz, L.M.3    Gaddy, O.L.4    Stillman, G.E.5
  • 17
    • 0020292188 scopus 로고
    • Investigation of transient electronic transport in GaAs following high energy injection
    • J. Y.-F. Tang and K. Hess, ‘Investigation of transient electronic transport in GaAs following high energy injection,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1906–1911, Dec. 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 1906-1911
    • Tang, J.Y.-F.1    Hess, K.2
  • 19
    • 49049134509 scopus 로고
    • On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements
    • H. Gant and W. Mönch “On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements,” Appl. Surf Sci., vol. 11/12, pp. 332–347, 1982.
    • (1982) Appl. Surf Sci. , vol.11-12 , pp. 332-347
    • Gant, H.1    Mönch, W.2
  • 20
    • 0019058555 scopus 로고
    • Unified defect model and beyond
    • W. E. Spicer, I. Lindau, P. Skeath, and C. Y. Su, “Unified defect model and beyond,” J. Vac. Sci. Technol., vol. 17, no. 5, pp. 1019–1027, 1980; also pp. 332–347, 1982.
    • (1982) J. Vac. Sci. Technol. , vol.17 , Issue.5 , pp. 1019-1027
    • Spicer, W.E.1    Lindau, I.2    Skeath, P.3    Su, C.Y.4
  • 27
    • 0022120352 scopus 로고
    • Two dimensional simulation of MODFET and GaAs gate heterojunction FETs
    • J. Y.-F. Tang, “Two dimensional simulation of MODFET and GaAs gate heterojunction FETs.” IEEE Trans. Electron Devices, vol. ED-32, pp. 1817–1823. Sept. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 1817-1823
    • Tang, J.Y.-F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.