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1
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0019596416
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Finite-element analysis of semiconductor devices: The Fielday program
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E. M. Buturla P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, “Finite-element analysis of semiconductor devices: The Fielday program,” IBM J. Res. Develop., vol. 25, pp. 218–231, 1981.
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(1981)
IBM J. Res. Develop.
, vol.25
, pp. 218-231
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Buturla, E.M.1
Cottrell, P.E.2
Grossman, B.M.3
Salsburg, K.A.4
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2
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0022062238
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Animation and 3D color display of multiple-variable data: Application to semiconductor design
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E. J. Farrell, S. E. Laux, P. L. Corson, and E. M. Buturla “Animation and 3D color display of multiple-variable data: Application to semiconductor design,” IBM J. Res. Develop., vol. 29, pp. 302–315, 1985.
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(1985)
IBM J.Res. Develop.
, vol.29
, pp. 302-315
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Farrell, E.J.1
Laux, S.E.2
Corson, P.L.3
Buturla, E.M.4
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3
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84939751691
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A submicrometer megabit DRAM process technology using trench capacitors
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S. Nakajuma, K. Minegishi, K. Miura, T. Morie, M. Kimizuke, and T. Mano, “A submicrometer megabit DRAM process technology using trench capacitors,” IEEE Trans. Electron Devices, vol. ED-32, pp. 210–216, 1985.
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(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 210-216
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Nakajuma, S.1
Minegishi, K.2
Miura, K.3
Morie, T.4
Kimizuke, M.5
Mano, T.6
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4
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84957172126
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High electron mobility transistor logic
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T. Mimura, K. Joshin, S. Hiyamizu, K. Hikosaka, and M. Abe, “High electron mobility transistor logic,” Jap. J. Appl. Phys., vol. 20, no. 8, pp. L598-600, Aug. 1981.
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(1981)
Jap. J. Appl. Phys.
, vol.20
, Issue.8
, pp. L598-L600
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Mimura, T.1
Joshin, K.2
Hiyamizu, S.3
Hikosaka, K.4
Abe, M.5
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5
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84939701526
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A GaAs gate heterojunction FET
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P. M. Solomon, C. N. Knoedler, S. Wright, and J. Y.-F. Tang,” A GaAs gate heterojunction FET,” presented at 1984 WOCSEMMAD (San Francisco), Feb. 20–22.
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(1984)
presented at WOCSEMMAD
, pp. 20-22
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Solomon, P.M.1
Knoedler, C.N.2
Wright, S.3
Tang, J.Y.-F.4
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7
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36749114655
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A generalized approximation of the Fermi-Dirac integrals
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X. Aymerich-Humet, F. Serra-Mestres, and J. Millan “A generalized approximation of the Fermi-Dirac integrals,” J. Appl. Phys., vol. 54, no. 5, 2850–2851, 1983.
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(1983)
J. Appl. Phys.
, vol.54
, Issue.5
, pp. 2850-2851
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Aymerich-Humet, X.1
Serra-Mestres, F.2
Millan, J.3
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8
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0021468632
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Non-uniform surface potentials and their observation by surface sensitive techniques
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J. Y.-F. Tang and J. L. Freeouf, “Non-uniform surface potentials and their observation by surface sensitive techniques,” J. Vac. Sci. Technol., vol. B2, pp. 459–464, 1984.
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(1984)
J. Vac. Sci. Technol.
, vol.B2
, pp. 459-464
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Tang, J.Y.-F.1
Freeouf, J.L.2
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9
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84916430884
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A self-consistent iterative scheme for one-dimensional steady state transistor calculations
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H. K. Gummel, “A self-consistent iterative scheme for one-dimensional steady state transistor calculations,” IEEE Trans. Electron Devices, vol. ED-110, pp. 455–465, 1964.
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(1964)
IEEE Trans. Electron Devices
, vol.ED-110
, pp. 455-465
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Gummel, H.K.1
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11
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0000564676
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Iterative solution of implicit approximations of multidimensional partial differential equations
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H. L. Stone, “Iterative solution of implicit approximations of multidimensional partial differential equations,” SIAM J. Numer. Anal., vol. 5, no. 3, pp. 530–558, 1968.
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(1968)
SIAM J. Numer. Anal.
, vol.5
, Issue.3
, pp. 530-558
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Stone, H.L.1
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12
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5244310310
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Phenomenological physics of hot carriers in semiconductors
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K. Hess, “Phenomenological physics of hot carriers in semiconductors,” in Physics of Nonlinear Transport in Semiconductors, D. K. Ferry, J. R. Barker, and C. Jacoboni, Eds. New York: Plenum, 1980, pp. 1–42.
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(1980)
Physics of Nonlinear Transport in Semiconductors D. K. Ferry, J. R. Barker, and C. Jacoboni, Eds. New York: Plenum
, pp. 1-42
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Hess, K.1
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13
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0017482945
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A computer analysis of heterojunction and graded composition solar cell
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J. E. Sutherland and J. R. Hauser, “A computer analysis of heterojunction and graded composition solar cell,” IEEE Trans. Electron Devices, vol. 1977.
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(1977)
IEEE Trans. Electron Devices
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Sutherland, J.E.1
Hauser, J.R.2
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14
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84916389355
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Large-signal analysis of a silicon Read diode oscillator
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D. L. Scharfetter and H. K. Gummel, “Large-signal analysis of a silicon Read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, pp. 64–77, Jan., 1969.
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(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 64-77
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Scharfetter, D.L.1
Gummel, H.K.2
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15
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5244375949
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High field temperature dependent electron drift velocity in GaAs
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T. H. Windhorn, T. J. Roth, L. M. Zinkiewicz, O. L. Gaddy, and G. E. Stillman, “High field temperature dependent electron drift velocity in GaAs,” Appl. Phys. Lett., vol. 40, no. 6, pp. 513–515, Mar. 1982.
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(1982)
Appl. Phys. Lett.
, vol.40
, Issue.6
, pp. 513-515
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Windhorn, T.H.1
Roth, T.J.2
Zinkiewicz, L.M.3
Gaddy, O.L.4
Stillman, G.E.5
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16
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84939760466
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Band-Structure De-pendent Impact loilization in Silicon and Gallium Arsenide
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Not published. For the Monte Carlo model, see “Band-Structure De-pendent Impact loilization in Silicon and Gallium Arsenide,” Journ. De. Physique, Hot Carriers in Semiconductors, Colloque C7-1981, pp. 63–69, 1981, by Tang et al.
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(1981)
Not published. For the Monte Carlo model, Journ. De. Physique, Hot Carriers in Semiconductors, Colloque C7-1981
, pp. 63-69
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17
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0020292188
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Investigation of transient electronic transport in GaAs following high energy injection
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J. Y.-F. Tang and K. Hess, ‘Investigation of transient electronic transport in GaAs following high energy injection,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1906–1911, Dec. 1982.
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(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, pp. 1906-1911
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Tang, J.Y.-F.1
Hess, K.2
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19
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49049134509
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On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements
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H. Gant and W. Mönch “On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements,” Appl. Surf Sci., vol. 11/12, pp. 332–347, 1982.
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(1982)
Appl. Surf Sci.
, vol.11-12
, pp. 332-347
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Gant, H.1
Mönch, W.2
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20
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0019058555
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Unified defect model and beyond
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W. E. Spicer, I. Lindau, P. Skeath, and C. Y. Su, “Unified defect model and beyond,” J. Vac. Sci. Technol., vol. 17, no. 5, pp. 1019–1027, 1980; also pp. 332–347, 1982.
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(1982)
J. Vac. Sci. Technol.
, vol.17
, Issue.5
, pp. 1019-1027
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Spicer, W.E.1
Lindau, I.2
Skeath, P.3
Su, C.Y.4
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21
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84939756475
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n+InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level
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A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.-F. Tang, and P. D. Kirchner, “n+InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level,” to be published in J. Vac. Sci. Technol.
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to be published in J. Vac. Sci Technol.
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Kleinsasser, A.W.1
Woodall, J.M.2
Pettit, G.D.3
Jackson, T.N.4
Tang, J.Y.-F.5
Kirchner, P.D.6
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22
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84919112911
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Ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors
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C. P. Lee, D. L. Miller, D. Hou. and R. J. Anderson, Ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors,” presented at IEEE Device Res. Conf. Burlington, VT, 1983.
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(1983)
presented at IEEE Device Res. Conf. Burlington, VT
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Lee, C.P.1
Miller, D.L.2
Hou, D.3
Anderson, R.J.4
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23
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0020310809
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High speech-low power GaAs/AlGaAs TEGFET integrated circuit
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N. T. Linh. P. N. Tung. D. Delabeaudeuf. P. Delescluse, and M. Laviron, “High speech-low power GaAs/AlGaAs TEGFET integrated circuit,” in IEDM Dig., 1982, pp. 582–585.
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(1982)
IEDM Dig.
, pp. 582-585
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Linh, N.T.1
Tung, P.N.2
Delabeaudeuf, D.3
Delescluse, P.4
Laviron, M.5
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24
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0020294326
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Material and devices considerations for selectively doped heterojunction transistors
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J. V. DiLorenzo, R. Dingle, M. Feuer, A. C. Gossard, R. Hendel, J. C. M. Huang, A. Kastalsky, V. G. Keramidas, R. A. Kiehl. and P. O’Connor, “Material and devices considerations for selectively doped heterojunction transistors, in IEDM Dig., 1982, pp. 578–581.
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(1982)
IEDM Dig.
, pp. 578-581
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DiLorenzo, J.V.1
Dingle, R.2
Feuer, M.3
Gossard, A.C.4
Hendel, R.5
Huang, J.C.M.6
Kastalsky, A.7
Keramidas, V.G.8
Kiehl, R.A.9
O’Connor, P.10
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25
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0021487806
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A GaAs gate heterojunction FET
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P. M. Solomon, C. M. Knoedler, and S. L. Wright “A GaAs gate heterojunction FET,” IEEE Electron Devices Lett., vol. ED-5, pp. 379–381, Sept. 1984.
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(1984)
IEEE Electron Devices Lett.
, vol.ED-5
, pp. 379-381
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Solomon, P.M.1
Knoedler, C.M.2
Wright, S.L.3
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26
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84939732999
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Accumulation-mode GaAs MIS-like FET self-aligned by ion implantation
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K. Matsumoto, M. Ogura, T. Wada, and N. Hashizume “Accumulation-mode GaAs MIS-like FET self-aligned by ion implantation,” presented at IEEE Device Research Conference (Santa Barbara, CA), 1984.
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(1984)
presented at IEEE Device Research Conference (Santa Barbara, CA)
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Matsumoto, K.1
Ogura, M.2
Wada, T.3
Hashizume, N.4
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27
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0022120352
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Two dimensional simulation of MODFET and GaAs gate heterojunction FETs
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J. Y.-F. Tang, “Two dimensional simulation of MODFET and GaAs gate heterojunction FETs.” IEEE Trans. Electron Devices, vol. ED-32, pp. 1817–1823. Sept. 1985.
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(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 1817-1823
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Tang, J.Y.-F.1
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