Room-temperature continuous-wave operation of blue-green CdZnSSe/ZnSSe quantum well laser diodes

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 345-346

  Law, K K ^a   Baude, P F ^a   Miller, T J ^a   Haase, M A ^a   Haugen, G M ^a   Smekalin, K ^a  

^a 3M COMPANY   (United States)

Author keywords

II VI semiconductors; Semiconductor junction lasers; Visible semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

BLUE GREEN LASER DIODES; DARK LINE DEFECTS; DISLOCATION DENSITY; LASER EMISSION; ROOM TEMPERATURE CONTINUOUS WAVE OPERATION; THREADING DISLOCATIONS; THRESHOLD VOLTAGE;

QUANTUM WELL LASERS;

EID: 0030083645     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960249     Document Type: Article

References (9)

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