Nitrogen doping of Te-based II-VI compounds

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 682-687

  Tatarenko, S ^a,b   Baron, T ^a   Arnoult, A ^a   Cibert, J ^a   Grun M ^a   Haury, A ^a   Merle D'Aubigne Y ^a   Wasiela, A ^a   Saminadayar, K ^b  

^a CNRS   (France)

^b CEA GRENOBLE   (France)

Author keywords

Doping; II VI semiconductors; Molecular beam epitaxy; Multilayers

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; MULTILAYERS; NITROGEN; PLASMA SOURCES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SAMARIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

CADMIUM MAGNESIUM TELLURIDE; CADMIUM TELLURIDE; CADMIUM ZINC TELLURIDE; ZINC MAGNESIUM TELLURIDE; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0031141223     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01003-2     Document Type: Article

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