p-type doping of beryllium chalcogenides grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 619-623

  Lugauer, H J ^a   Litz, Th ^a   Fischer, F ^a   Waag, A ^a   Gerhard, T ^a   Zehnder, U ^a   Ossau, W ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Beryllium chalcogenides; II VI semiconductors; MBE; p Type doping; Superlattice

Indexed keywords

BERYLLIUM COMPOUNDS; CARRIER CONCENTRATION; ENERGY GAP; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

BERYLLIUM CHALCOGENIDES; VAN DER PAUW MEASUREMENTS;

SEMICONDUCTING GLASS;

EID: 0031142816     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01000-7     Document Type: Article

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