Microstructural characterization of stoichiometric buried Si3N4 films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 227-230

  Paloura, E C ^a   Ginoudi, A ^a   Markwitz, A ^b   Lioutas, Ch ^a   Katsikini, M ^a   Bethge, K ^b   Aminpirooz, S ^c   Rossner, H ^c   Holub Krappe, E ^c   Zorba, T ^a   Siapkas, D ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b GOETHE UNIVERSITY   (Germany)

^c HMI Berlin   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARACTERIZATION; CHEMICAL BONDS; INFRARED RADIATION; ION IMPLANTATION; IONS; LIGHT ABSORPTION; MICROSTRUCTURE; RADIATION DAMAGE; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

BACK INTERFACE; BURIED STOICHIOMETRIC SILICON NITRIDE; CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY; EXTENDED X RAY ABSORPTION FINE STRUCTURE; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; NUCLEAR REACTION ANALYSIS;

SILICON NITRIDE;

EID: 0030166168     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01367-9     Document Type: Article

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