Low-temperature growth of SnOx thin films using reactive ion-assisted deposition

Journal of Materials Science Letters

Volumn 16, Issue 7, 1997, Pages 524-527

  Cho, J S ^a   Song, S K ^a   Jung, H J ^a   Koh, S K ^a   Choi, W K ^a   Yoon, K H ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; DEPOSITION; FILM GROWTH; ION BOMBARDMENT; OXIDATION; OXIDES; OXYGEN; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS; THIN FILMS;

REACTIVE ION ASSISTED DEPOSITION (RIAD);

TIN COMPOUNDS;

EID: 0031121721     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018545217200     Document Type: Article

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