Low-Noise Characteristics of Pulse-Doped GaAs MESFET's with Planar Self-Aligned Gates

IEEE Transactions on Electron Devices

Volumn 39, Issue 4, 1992, Pages 771-776

  Nakajima, Shigeru ^a   Otobe, Kenji ^a   Shiga, Nobuo ^a   Kuwata, Nobuhiro ^a   Matsuzaki, Ken Ichiro ^a   Sekiguchi, Takeshi ^a   Hayashi, Hideki ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ORGANOMETALLICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES--NOISE;

PLANAR GATES; VAPOR PHASE EPITAXY;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026852923     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.127464     Document Type: Article

References (28)

1. M. Abe, T. Mimura, N. Kobayashi, M. Suzuki, M. Kosugi, M. Nakayama, K. Odani, and I. Hanyu, “Recent advances in ultrahigh-speed HEMT LSI technology,” IEEE Trans. Electron Devices, vol. 36, pp. 2021–2031, Oct. 1989.
2. P. C. Chao et al., “Millimeter-wave low noise high electron mobility transistors,” IEEE Electron Device Lett., vol. EDL-6, pp. 531–533, 1985.
3. H. Kawasaki et al., “Super low noise AlGaAs/GaAs HEMT with one tenth micron gate,” in IEEE MTT-S Dig., June 1989. pp. 423–426.
4. F. Hasegawa, “Is HEMT really a high electron mobility transistor?” IEEE Trans. Electron Devices, vol. ED-32, no. 11, p. 2528, 1985.
5. F. Hasegawa, “Principal GaAs FET parameter which most influences the transconductance gmmax,” in Extended Abstracts 19th Conf. on Solid State Devices and Materials, 1987, pp. 387–390.
6. H. Hida, Y. Suzuki, F. Katano, H. Toyoshima, A. Okamoto, and S. Kumashiro, “A 760 mS/mm n+ self-alined enhancement mode doped-channel MIS-like FET (DMT),” in IEDM Tech Dig., 1986, pp. 759–762.
7. K. Onodera, M. Tokumitsu, S. Sugitani, Y. Yamane, and K. Asai, “A 630 mS/mm GaAs MESFET with Au/WSiN refactory metal gate,” IEEE Electron Device Lett., vol. 9, no. 8, pp. 417–418, 1988.
8. C. L. Lau et al., “Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8 dB noise figure at 16 GHz,” IEEE Electron Device Lett., vol. 10, pp. 409–411, 1989.
9. K. Hosogi, N. Ayaki, T. Kato, T. Oku, Y. Kohno, H. Nakano, T. Shimura, H. Takano, and K. Nishitani, “Super low noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHz,” in IEEE MTT-S Dig., 1990, pp. 1257–1260.
10. A. Cappy et al., “Noise modeling in submicronmeter-gate two dimensional electron-gas field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-32, no. 12, pp. 2787–2795, Dec. 1985.
11. A. Cappy, “Noise modeling and measurement techniques,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 1, pp. 1–9, Jan. 1988.
12. K. Joshin et al., “Experimental and theoretical noise analysis of microwave HEMT's,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2274–2280, Oct. 1989.
13. U. K. Mishra et al., “MBE grown GaAs MESFETs with ultra-high gm and fT,” in IEDM Tech. Dig., 1986, pp. 829–831.
14. S. Nakajima, K. Otobe, N. Kuwata, N. Shiga, K. Matsuzaki, and H. Hayashi, “Pulse-doped GaAs MESFETs with planar self-aligned gate for MMIC,” in IEEE MTT-S Dig., 1990, pp. 1081–1084.
15. N. Shiga, S. Nakajima, K. Otobe, T. Sekiguchi, N. Kuwata, K. Matsuzaki, and H, Hayashi, “X-band monolithic four-stage LNA with pulse-doped GaAs MESFETs,” in GaAs IC Symp. Tech. Dig., 1990, pp. 237–240.
16. K. Yamasaki et al., “Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs,” Electron. Lett., vol. 18, no. 3, pp. 119–121, Feb. 1982.
17. S. Nakajima, K. Otobe, T. Katsuyama, N. Shiga, and H. Hayashi, “OMVPE grown GaAs MESFETs with step-doped channel for MMICs,” in GaAs IC Tech. Dig., pp. 297–300, Nov. 1988.
18. S. Nakajima, N. Kuwata, N. Nishiyama, N. Shiga, and H. Hayashi, “Electronic properties of a pulse-doped GaAs structure grown by organometallic vapor phase epitaxy,” Appl. Phys. Lett., vol. 57, no. 13, pp. 1316–1317, Sept. 1990.
19. M. C. Foisy et al., “The role of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET,” IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 871–878. July 1988.
20. B. Kim et al., “Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2236–2242, Oct. 1989.
21. H. Hida, A. Okamoto, H. Toyoshima, and K. Ohata, “An investigation of i-AlGaAs/n-GaAs doped-channel MIS-like FET's (DMT's)-properties and performance potentialities,” IEEE Trans. Electron Devices, vol. ED-34, no. 7, 1448–1455, July 1987.
22. T. Nakanishi, T. Udagawa, A. Tanaka, and K. Kamei, “Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's,” J. Crystal Growth, vol. 55, pp. 255–262, 1981.
23. T. Nozaki and K. Ohata, “Sub-micron gate GaAs MESFET's with ion-implanted channels,” in Proc. 8th Conf. on Solid State Devices, 1976, p. 111.
24. J. V. Dilorenzo and D. D. Khandelwal, GaAs FET Principles and Technology. Norwood, MA: Artech House, 1984, pp. 185–186.
25. H. Fukui, “Optimal noise figure of microwave GaAs MESFETs,” IEEE Trans. Electron Devices, vol. 26, pp. 1032–1037, July 1979.
26. M. Feng, V. K. Eu, T. Zielinski, H. Kanber, and W. B. Henderson, “GaAs MESFET's made by ion implantation into MOCVD buffer layers,” IEEE Electron Device Lett., vol. EDL-5, pp. 18–20, Jan. 1984.
27. H. Goronkin and V. Nair, “Comparison of GaAs MESFET noise figures,” IEEE Electron Device Lett., vol. EDL-6, no. 1, pp. 47–49 Jan. 1985.
28. G. W. Wang and M. Feng, “Quarter-micrometer gate ion-implanted GaAs MESFET's with an fT of 126 GHz,” IEEE Electron Device Lett., vol. 10, no. 8, pp. 386–388, Aug. 1989.