Passive temperature compensation of uncooled GaInAsP-InP diode lasers using thermal stress

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 649-658

  Cohen, Daniel A ^b   Coldren, Larry A ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

Distributed feedback lasers; Multiplexing; Photoelastic materials devices; Semiconductor lasers; Strain; Stress; Temperature control; Wavelength division multiplexing

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; EPITAXIAL GROWTH; FREQUENCY DIVISION MULTIPLEXING; HEAT SINKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; STRAIN; TEMPERATURE CONTROL; THERMAL EFFECTS; THERMAL EXPANSION; THERMAL STRESS;

PHOTOELASTIC MATERIALS;

QUANTUM WELL LASERS;

EID: 0031109102     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605717     Document Type: Article

References (37)

1. N. S. Bergano, C. R. Davidson, D. L. Wilson, F. W. Kerfoot, M. D. Tremblay, M. D. Levonas, J. P. Morreale, J. D. Evankow, P. C. Corbett, M. A. Mills, G. A. Ferguson, A. M. Vengsarkar, J. R. Pedrazzani, J. A. Nagel, J. L. Zyskind, and J. W. Sulhoff, "100 Gb/s error free transmission over 9100 km using twenty 5 Gb/s WDM channels," in Proc. 1996 Conf. Optical Fiber Communication, pp. PD23.
2. T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikula, "High temperature operation of 1.3 μm GaInAsP/InP GRINSCH strained-layer quantum well lasers," Electron. Lett., vol. 29, pp. 392-393, 1993.
3. W. S. Ring, H. Lage, A. J. Taylor, I. S. Smith, and R. M. Ash. "Optimization of highly efficient uncoated strained 1300-nm InGaAsP MQW lasers for uncooled high-temperature operation," in Proc. OFC'96 - Conf. Optical Fiber Communication, 1996, pp. 230-231.
4. 1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications," IEEE J. Quantum Electron., vol. 30, pp. 511-523, 1994.
5. A. Kasukawa, N. Iwai, and N. Yamanaka, "Very high characteristic temperature and constant differential quantum efficiency 1.3 μm GaInAsP/InP strained-layer quantum well lasers by use of temperature dependent reflectivity (TDR) mirror," Electron. Lett., vol. 30, pp. 1064-1065, 1994.
6. A. Kasuakwa, R. Bhat, C. Caneau, N. C. Andreadakis, B. Pathak, C. E. Zah, M. A. Koza, and T. P. Lee, "1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by organometallic chemical vapor deposition," Jpn. J. Appl. Phys. vol. 31, pp. 1365-1371, 1992.
7. P. J. A. Thijs, T. van Dongen, J. J. M. Binsma, and E. J. Jansen, "High performance buried heterostructurc λ = 1.5 μm InGaAs/AlGaInAs strained-layer quantum well laser diodes," in Proc. Eighth Int. Conf. Indium Phosphide and Related Materials, 1996, pp. 765-768.
8. R. J. Campbbell, J. R. Armitage, G. Sherlock, D. L. Williams, R. Payne, M. Robertson, and R. Wyatt, "Wavelength stable uncooled fiber grating semiconductor laser for use in an all optical WDM access network," Electron. Lett., vol. 32, pp. 119-120, 1996.
9. D. L. Williams, B. J. Ainslie, R. Kashyap, G. Sherlock, R. P. Smith, and J. V. Collins, "Temperature stable 1.3 μm laser with Bragg fiber grating external cavity for access networks," in Proc. 19th Eur. Conf. Optical Communication, 1993, pp. 209-212.
10. D. A. Cohen, M. E. Heimbuch, and I., A. Coldren, "Reduced temperature sensitivity of the wavelength of a diode laser in a stress-engineered hydrostatic package," Appl. Phys. Lett., vol. 69, pp. 455-457, 1996.
11. xAs lasers," J. Appl. Phys., vol. 50, pp. 4567-4579, 1979.
12. R. Maciejko, J. M. Glinski, A. Champagne, J. Berger, and L. Samson, "Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers," IEEE J. Quantum Electron., vol. 25, pp. 651-661, 1989.
13. 1-y lasers," Electron. Lett., vol. 18, pp. 919-920, 1982.
14. 1-ylasers," in Proc. Tenth Int. Symp. Gallium Arsenide and Related Compounds, 1982, pp. 265-272.
15. 1-y lasers," Electron. Lett., vol. 18, pp. 527-528, 1982.
16. D. Patel, C. S. Menoni, H. Temkin, R. A. Logan, and D. Coblentz, "Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa," Appl. Phys. Lett., vol. 62, pp. 2459-2461, 1993.
17. W. S. Ring, A. R. Adams, P. J. A. Thijs, and T. Van Dongen, "Elimination of intervalence band absorption in compressively strained InGaAs/lnP 1.5 μm MQW lasers observed by hydrostatic pressure measurements," Electron. Lett., vol. 28, pp. 569-570, 1992.
18. P. Enders, R. Muller, A. Klehr, and H. Gundlach, "8-band k.p theory of the material gain of strained tetrahedral semiconductors: application to 1.3 μm-InGaAsP lasers subject to additional external uniaxial stress," Proc. Inst. Elect. Eng. - Optoelectronics, vol. 143, pp. 62-66, 1996.
19. W. S. Ring, M. O. Henry, J. E. A. Whiteaway, and C. J. Armistead, "Insight into optical gain effects in InGaAs/InP multiple quantum well laser diodes observed by uniaxial stress," in Proc. Int. Symp. Physical Concepts and Materiah for Novel Optoelectronic Device Application II, 1993, pp. 667-676.
20. S. Tiwari, R. S. Bates, C. S. Harder, and A. Behfar-Rad, "Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well lasers," Appl. Phys. Lett., vol. 60, pp. 413-415, 1992.
21. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors. New York: Wiley, 1974.
22. J. Singh, Physics of Semiconductors and their Heterostructures. New York: McGraw-Hill, 1993.
23. C. S. Adams and D. T. Cassidy, "Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers," J. Appl Phys., vol. 64, pp. 6631-6638, 1988.
24. P. Enders, A. Barwolff, M. Woerner, and D. Suisky, "k.p theory of energy hands, wave functions, and optical selection rules in strained tetrahedral semiconductors," Phys. Rev. B. vol. 51, pp. 16695-16704, 1995.
25. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circutis. New York: Wiley, 1995.
26. 1-x." J. Appl. Phys., vol. 66, pp. 6030-6040, 1989.
27. S. Y. Hu, S. W. Corzine, K. K. Law, D. B. Young, A. C. Gossard, L. A. Coldren, and J. L. Merz, "Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide structures," J. Appl. Phys., vol. 76, pp. 4479-4487, 1994.
28. W. A. Brantley, "Calculated clastic constants for stress problems associated with semiconductor devices," J. Appl. Phys., vol. 44, pp. 534-535, 1973.
29. N. Suzuki and K. Tada, "Elastooptic properties of InP," Jpn. J. Appl. Phys., vol. 22, pp. 441-445, 1983.
30. N. Suzuki and K. Tada, "Elastooptic and electrooptic properties of GaAs," Jpn. J. Appl. Phys., vol. 23, pp. 1011-1016, 1984.
31. R. W. Dixon, "Photelasticc properties of selected materials and their relevance for applications to acoustic light modulators and scanners," J. Appl. Phys., vol. 38, pp. 5149-5153, 1967.
32. S. W. Corzine, R. H. Yan, and L. A. Coldren, "Optical Gain in III-V Bulk and Quantum Well Semiconductors," in Quantum Well Lasers, P. S. Zory, Ed. New York: Academic, 1993, pp. 17-96.
33. S. R. Chinn, P. S. Zory, Jr., and A. R. Reisinger, "A model for GRIN-SCH-SQW diode lasers," IEEE J. Quantum Electron., vol. 24, pp. 2191-214, 1988.
34. A. Katz, Indium Phosphide and Related Materials: Processing, Technology, and Devices. Norwood, MA: Artech House, 1992.
35. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, vol. V.17a Physics of group IV elements and III-V compounds. New York: Springer-Verlag, 1982.
36. 1-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982.
37. S. Seki, H. Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, "Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 32, pp. 1478-1486, 1996.