8-band k.p theory of the material gain of strained tetrahedral semiconductors: Application to 1.3 μm-InGaAsP lasers subject to additional external uniaxial stress

IEE Proceedings: Optoelectronics

Volumn 143, Issue 1, 1996, Pages 62-66

  Enders, P ^a   Muller R ^a   Klehr, A ^a   Gundlach, H ^a,b  

^a MAX BORN INSTITUT   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Laser diodes; Strained semiconductors; Tetrahedral semiconductors

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; INTEGRATION; LIGHT EMISSION; LIGHT POLARIZATION; MATHEMATICAL MODELS; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; TRANSPARENCY;

BRILLOUIN ZONE INTEGRATION; EXTERNAL UNIAXIAL STRESS; MATERIAL GAIN; MAXIMUM LINEAR GAIN; STRAINED SEMICONDUCTORS; TETRAHEDRAL SEMICONDUCTORS; THRESHOLD CURRENTS; TRANSPARENCY DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030081462     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960141     Document Type: Article

References (16)

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