Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers

IEEE Photonics Technology Letters

Volumn 8, Issue 3, 1996, Pages 328-330

  Niwa, A ^b   Ohtoshi, T ^a,b   Uomi, K ^b   Nakahara, K ^b  

^a IEEE

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRIC CURRENTS; FERMI LEVEL; LIGHT EMISSION; LIGHT MODULATION; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

BAND MIXING EFFECTS; CONDUCTION BAND; MODULATION DOPED STRAINED LASERS; THRESHOLD CURRENT; VALENCE BAND;

QUANTUM WELL LASERS;

EID: 0030109583     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481106     Document Type: Article

References (16)

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