Self-aligned complementary GaAs MISFETs using a low-temperature-grown GaAs gate insulator

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 407-409

  Chen, C L ^a   Mahoney, L J ^a   Nichols, K B ^a   Brown, E R ^a  

^a NONE

Author keywords

Gallium arsenide; MISFET

Indexed keywords

BERYLLIUM; ELECTRIC CURRENTS; EPITAXIAL GROWTH; GATES (TRANSISTOR); ION IMPLANTATION; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

EPITAXIAL LAYER STRUCTURES; LOW TEMPERATURE GROWN; THRESHOLD VOLTAGE;

MISFET DEVICES;

EID: 0030080934     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960221     Document Type: Article

References (7)

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2. KIEHL, R.A., YATES, J., PALMATEER, L.F., WRIGHT, S.L., FRANK, D.J., JACKSON, T.N., DEGELORMO, J.F., and FLEISCHMAN, A.J.: 'High-speed low-voltage complementary heterostructure FET circuit technology'. Tech. Dig. 1991 GaAs IC Symp., 1991, pp. 101-104
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7. LEE, C.P., LEE, S.J., and WELCH, B.M.: 'Carrier injection and backgating effect in GaAs MESFETs', IEEE Electron Device Lett.. 1982, EDL-3, pp. 97-98