Self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 245-248

  Kitaura, Yoshiaki ^a   Nishihori, Kazuya ^a   Tanabe, Yoshikazu ^a   Mihara, Masakatsu ^a   Yoshimura, Misao ^a   Nitta, Tomohiro ^a   Kakiuchi, Yorito ^a   Uchitomi, Naotaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL COMMUNICATION SYSTEMS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; HETEROJUNCTIONS; ION IMPLANTATION; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BURIED CHANNEL HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; GATE DRAIN BREAKDOWN VOLTAGE; SCHOTTKY BARRIER HEIGHT; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0030391961     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)