Deep, three dimensional lithography with a laser-plasma x-ray source at 1nm wavelength

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 541-544

  Turcu, I C E ^c   Mann, C M ^c   Moon, S W ^a,c   Allott, R ^c   Lisi, N ^c   Maddison, B J ^c   Huq, S E ^c   Kim, N S ^b,c  

^a Korea Institute of Science and Technology   (South Korea)

^b Kumho Info Telecommunication Lab   (South Korea)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; LASER PRODUCED PLASMAS; MASKS; PHOTORESISTS; THREE DIMENSIONAL; WAVEGUIDE COMPONENTS; X RAY LITHOGRAPHY;

LASER PLASMA X RAY SOURCE; SOFT X RAYS; THREE DIMENSIONAL LITHOGRAPHY; WAVEGUIDE CAVITY; X RAY EXPOSURE TIME;

MICROELECTRONIC PROCESSING;

EID: 0031073199     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00151-7     Document Type: Article

References (7)

1. W Ehrfeld, D Munchmeyer, Nucl Instrum Meth Phys Res A303 (1991) 523.
2. ICE Turcu, CM Mann, BJ Maddison, "Deep pattern lithography", International Patent Application, PCT/GB96/00421 (1996).
3. ICE Turcu, IN Ross, Rev Sci Instrum 67 (1996) 3245.
4. ICE Turcu et al, Proc Soc Photo-Opt Instrum Eng SPIE2015 (1994) 243-260.
5. CM Reeves et al, Microelectronic Eng 30 (1996) 187.
6. P Hudek et al, Microelectronic Eng 30 (1996) 309.
7. SW Moon et al, Electronics Lett 32 (1996) 1794.