Fabrication of 200nm field effect transistors by X-ray lithography using a laser-plasma X-ray source

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 187-190

  Reeves, C M ^a   Turcu, I C E ^b   Stevenson, J T M ^a   Ross, A W S ^a   Gundlach, A M ^a   Prewett, P ^b   Lawes, R A ^b   Anastasi, P ^c   Burge, R ^c   Michell, P ^d  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c KING'S COLLEGE LONDON   (United Kingdom)

^d Leica Lithography Systems Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; EXCIMER LASERS; FIELD EFFECT TRANSISTORS; LASER PRODUCED PLASMAS; MICROELECTRONIC PROCESSING; PHOTORESISTS; PLASMA SOURCES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

EXIMER DOUBLE PASS AMPLIFIER LASER; LASER OSCILLATOR; LASER PLASMA X RAY SOURCE; MICRON MYLAR SPACER;

X RAY LITHOGRAPHY;

EID: 0029755945     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00223-5     Document Type: Article

References (3)

1. Turcu et al., Microelectronic Eng.23 (1994) p207
2. Viswanathan et al., J. Vac. Sci. and Tech. B11 (1993) p2910.
3. Turcu et al., Microelectronic Eng.27 (1995) p295