High performance IGBT with new n+buffer structure

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 474-479

  Takahashi, H ^a   Ishimura, Y ^a   Yokoyama, C ^a   Hagino, H ^a   Yamada, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; COMPUTER SIMULATION; ELECTRIC INVERTERS; ELECTRIC LOSSES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SHORT CIRCUIT CURRENTS; SUBSTRATES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SOFTWARE PACKAGE DAVINCI;

BIPOLAR TRANSISTORS;

EID: 0029178886     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)