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Applied Physics Letters

Volumn 65, Issue 8, 1994, Pages 953-955

Transient behavior and memory effect of a PbZrxTi 1-xO3/YBa2Cu3O7-x three-terminal device

(5) Lin, H a Wu, N J a Xie, K a Li, X Y a Ignatiev, A a

a UNIVERSITY OF HOUSTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000874241 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.112159 Document Type: Article

Times cited : (33)

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- (1992) Proceedings of the 8th International Symposium on Applications of Ferroelectrics, Greenville, South Carolina, 1992 , pp. 217
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12
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- Proceedings of the 5th International Symposium on Integrated Ferroelectrics, Colorado Springs, Colorado, 1993
- Lin, H.¹ Wu, N.J.² Xie, K.³ Li, X.Y.⁴ Ignatiev, A.⁵ Taylor, G.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.