Elementary processes during low-energy self-bombardment of Si(100)2 × 2 - A molecular dynamics study

Radiation Effects and Defects in Solids

Volumn 141, Issue 1-4, 1997, Pages 185-198

  Uhlmann, S ^a   Frauenheim, T H ^a   Boyd, K J ^b,c   Marton, D ^b   Rabalais, J W ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b University of Houston   (United States)

^c UNIVERSITY OF UTAH   (United States)

Author keywords

Ion beam deposition; Molecular dynamics; Silicon; Subplantation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; ION BEAMS; ION BOMBARDMENT; MOLECULAR DYNAMICS; PROBABILITY DENSITY FUNCTION; RADIATION EFFECTS; SURFACE PROPERTIES; THIN FILMS;

ION BEAM DEPOSITION; SUBPLANTATION;

SILICON;

EID: 0030647305     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159708211569     Document Type: Article

References (25)

1. J.W. Rabalais, A.H. Al-Bayati, D Marton, K.J. Boyd, J. Kulik, Z.H. Zhang and W.K. Chu, Phys. Rev. B 53, 10781 (1996).
2. Y. Lifshitz, G.D. Lempert, S. Rotter, I. Avigal, C. Uzan-Saguy and R. Kalish, Diam. Rel. Mat. 2, 285 (1993).
3. Y. Lifshitz, S.R. Kasi, J.W. Rabalais and W. Eckstein, Phys. Rev. B 41, 10468 (1990).
4. Y. Lifshitz, G.D. Lempert and E. Grossman, Phys. Rev. Lett. 72, 2753 (1994).
5. J. Robertson, Diam. Rel. Mat. 2, 984 (1993); J. Robertson, Diam. Rel. Mat. 3, 361 (1994).
6. J. Robertson, Diam. Rel. Mat. 2, 984 (1993); J. Robertson, Diam. Rel. Mat. 3, 361 (1994).
7. C A. Davis, Thin Solid Films 226, 30 (1993).
8. P.J. Fallon, V.S. Veerasamy, C.A. Davis, J. Robertson, G A J. Amaratunga, W.I. Milne and J. Koskinen, Phys. Rev. B 48, 4777 (1993).
9. K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann and Th. Frauenheim, to be published.
10. K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann and Th. Frauenheim, to be published.
11. K.J. Boyd, D. Marton and J.W. Rabalais, to be published.
12. D. Marton, In: Low Energy Ion-Surface Interactions, Ed., J.W. Rabalais Wiley, 1994, p. 525.
13. P.L.F. Hemment and P.R.C. Stevens, J. Appl. Phys 40, 4893 (1969).
14. K.J. Boyd, D. Marton and J.W. Rabalais, to be published.
15. L.A. Miller et al., Rad. Eff. Def. Solids 129, 127 (1994).
16. G.H. Gilmer and C. Roland, Rad. Eff. Def. Sol. 130/131, 321 (1994).
17. M. Kitabatake and J.E. Greene, J. Appl. Phys. 73, 3183 (1993).
18. M. Kitabatake and J.E. Greene, Thin Solid Films 272, 271 (1996).
19. Th. Frauenheim, F. Weich, Th. Koehler, S. Uhlmann, D. Porezag and G. Seifert, Phys. Rev B 52, 11492 (1995).
20. D. Porezag, Th. Frauenheim, Th. Koehler, G. Seifert and R. Kaschner, Phys. Rev. B 51, 12947 (1995).
21. D.K. Brice, J Y. Tsao and S.T. Picraux, Nucl. Instr. Meth. B 44, 68 (1989).
22. V. Milman, S.J. Pennycook and D.E. Jesson, Thin Solid Films 272, 375 (1996).
23. A. Ramstad, G. Brocks and P.J. Kelly, Phys. Rev. B 51, 14504 (1995).
24. A. Oshiyama, Phys. Rev. Lett. 74, 130 (1995).
25. J.E. Northrup, Phys. Rev. B 47, 10032 (1993).