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Volumn 120, Issue 1-4, 1996, Pages 151-155
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Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
ANNEALING;
AUGER ELECTRON SPECTROSCOPY;
CRYSTALLIZATION;
INFRARED SPECTROSCOPY;
ION BOMBARDMENT;
MICROSCOPIC EXAMINATION;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
SILICON COMPOUNDS;
GERMANIUM SILICIDE;
ION BEAM SYNTHESIS;
RECRYSTALLIZATION;
ION IMPLANTATION;
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EID: 0030566478
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(96)00498-3 Document Type: Article |
Times cited : (3)
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References (10)
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