High temperature high dose C ion implantation in epitaxial SiGe

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 173-176

  Perez Rodriguez A ^a   Romano Rodriguez A ^a   Serre, C ^a   Calvo Barrio, L ^a   Cabezas, R ^a   Gonzalez Varona O ^a   Morante, J R ^a   Kogler R ^b   Skorupa, W ^b   Rodriguez A ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM ALLOYS; ION BOMBARDMENT; MICROSCOPIC EXAMINATION; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; STRESS RELAXATION; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYERS; SILICON GERMANIUM ALLOYS;

ION IMPLANTATION;

EID: 0030566605     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00503-4     Document Type: Article

References (9)

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