Effect of supplied substrate bias frequency in ultrahigh-frequency plasma discharge for precise etching processes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 3004-3009

  Samukawa, Seiji ^a   Ohtake, Hiroto ^a   Tsukada, Tsutomu ^b  

^a NEC CORPORATION   (Japan)

^b Anelva Company Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030504669     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580163     Document Type: Article

References (12)

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