A new lifetime characterization technique using drain current transients in SOI material

Solid-State Electronics

Volumn 39, Issue 12, 1996, Pages 1753-1755

  Ionescu, A M ^a   Cristoloveanu, S ^a   Munteanu, D ^a   Elewa, T ^a   Gri, M ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSIENTS;

DRAIN CURRENT TRANSIENTS; ZERBST PHENOMENA;

MOSFET DEVICES;

EID: 0030413493     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00113-X     Document Type: Article

References (6)

1. S. Cristoloveanu and S. S. Li, Electrical Characterization of SOI Materials and Devices. Kluwer Press (1995).
2. S. Cristoloveanu and S. Williams, IEEE Electron Dev. Lett. 13, 102 (1992).
3. A. M. Ionescu, S. Cristoloveanu, S. R. Wilson, A. Rusu, A. Chovet and H. Seghir, Nucl. Instr. and Meth. in Phys. Res. B 112, 228 (1996).
4. S. Cristoloveanu, T. Elewa, D. Munteanu and A. M. Ionescu, IEEE Int. SDI Conf., 160 (1996).
5. D. K. Schroder, Semiconductor Material and Device Characterization. Wiley, New York (1990).
6. M. Bruel, Nucl. Instr. and Meth. in Phys. Res. B 108, 313 (1996).