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Volumn , Issue , 1996, Pages 160-161
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Novel techniques for carrier lifetime measurement by Ψ-MOSFET transients
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
CRYSTAL DEFECTS;
ELECTRIC CURRENTS;
INTERFACES (MATERIALS);
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
SILICON ON INSULATOR TECHNOLOGY;
CARRIER GENERATION LIFETIME;
CHARGE BALANCE EQUATION;
DRAIN CURRENT TRANSIENTS;
WAFER SCREENING;
MOSFET DEVICES;
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EID: 0030415295
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (3)
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