Enhancement of data retention time for giga-bit DRAMs using SIMOX technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 37-38

  Tanigawa, T ^a   Yoshino, A ^a   Koga, H ^a   Ohya, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CAPACITORS; LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TECHNOLOGY; TRANSISTORS;

DATA RETENTION TIME; DYNAMIC RANDOM ACCESS MEMORY; P TYPE STACKED CAPACITOR; SIMOX TECHNOLOGY;

RANDOM ACCESS STORAGE;

EID: 0028602215     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)