Novel pattern transfer process for bonded SOI giga-bit DRAMs

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 114-115

  Lee, B H ^a   Bae, G J ^a   Lee, K W ^a   Cha, G ^a   Kim, W D ^a   Lee, S I ^a   Barge, T ^a   Auberton Herve, A J ^a   Lamure, J M ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); PATTERN TRANSFER PROCESS;

RANDOM ACCESS STORAGE;

EID: 0030397240     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)