Improvement of leakage-current-related yield of SOI MOSFETs using nitrogen ion-implantation to the source and drain regions

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 168-169

  Yamaguchi, Y ^a   Kim, I J ^a   Maeda, S ^a   Iwamatsu, T ^a   Ipposhi, T ^a   Inoue, Y ^a   Miyoshi, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; NITROGEN; SILICON ON INSULATOR TECHNOLOGY;

LEAKAGE CURRENT SUPPRESSION; PARASITIC EDGE TRANSITION; SOURCE AND DRAIN REGIONS;

MOSFET DEVICES;

EID: 0030421137     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)