Boron diffusion model refinement and its effect on the calculation of reverse short channel effect

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 15-16

  Hane, M ^a   Rafferty, C S ^b   Ikezawa, T ^a   Matsumoto, H ^a  

^a NEC CORPORATION   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BORON; DIFFUSION IN SOLIDS; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BORON DIFFUSIONS; DOPANT DIFFUSION; FLAT CHANNELS; NMOSFET; PARAMETER DEPENDENCE; QUANTITATIVE DESCRIPTION; REVERSE SHORT CHANNEL EFFECTS;

SEMICONDUCTOR DEVICES;

EID: 85015620374     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865251     Document Type: Conference Paper

References (11)

1. C.S Rafferty et al., IEDM Tech. Digs., p.311(1993)
2. K. Nishi et al., IEDM Tech. Digs., p.993(1995)
3. K. Takeuchi, et al., Symp. on VLSI Tech. Dig., p.9(1995)
4. M. Hane et al., IEEE Trans. ED 40(7), p.1215(1993)
5. C.P. Ho, et al., IEEE Trans. ED, 30(11), p.1438(1983)
6. PROMIS 1.6 Release Notes, K. Wimmer, June 1991," Technical University of Vienna.
7. S. Kumashiro and M. Sakurai, NASECODE-IV, p.365(1985)
8. D. R. Lim, et al, Appl. Phys. Lett., 67(16), p.2302(1995)
9. H. Park and M. E. Law, J. Appl. Phys., 72(8), p.3431(1992)
10. B. Baccus, et al., J. Appl. Phys., 77(11), p.5630(1995)
11. J. M. Poate et al., IEDM Tech. Digs., p.77(1995)