Simple small-signalmodel for 3-port mos transistors

IEICE Transactions on Electronics

Volumn E79-C, Issue 12, 1996, Pages 1760-1764

  Niitsu, Yoichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Circuit simulation; Non quasi static effect; Small signal

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFERENTIAL EQUATIONS; LINEARIZATION; MATRIX ALGEBRA; MICROWAVE CIRCUITS; SEMICONDUCTOR DEVICE MODELS;

BULK CHARGE EFFECT; CIRCUIT SIMULATION; CUT OFF FREQUENCY; NON QUASI STATIC EFFECT;

MOSFET DEVICES;

EID: 0030389563     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. D.B. Candler and A.G. Jordan, A small-signal, highfrequency analysis of the insulated-gate field-effect transistor, Internat'1 J. of Electronics vol.19, p.181, 1965.
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3. P. Vandeloo and W. Sansen, Measuring and fitting the MOS transistor at high frequencies, IEEE Trans. Instrum. Meas., vol.37, p.591, 1988.
4. J.J. Paulos and D.A. Antoniadis, Limitations of quasistatic capacitance models for the MOS transistors, IEEE Electron Device Lett., vol.EDL-4, p.221, 1983.
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6. BSIM3v3 Manual, Department of Electrical Engineering and Computer Science, UCB, CA, Oct.30, 1995. (available from http://rely.eecs.berkeley.edu:80SO/bsim3www/bsim3. html)
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8. M. Abramovitz and I.A. Stegun, Handbook of Mathematical Functions, Dover, New York, 1970.