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Volumn , Issue , 1994, Pages 169-172
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Relaxation time approach to model the non-quasi-static transient effects in MOSFET's
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
MATHEMATICAL MODELS;
REAL TIME SYSTEMS;
FINITE CHARGING TIME;
RELAXATION TIME APPROACH;
TRANSIENT ANALYSIS;
MOSFET DEVICES;
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EID: 0028747636
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (8)
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References (6)
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