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Journal of Applied Physics

Volumn 76, Issue 3, 1994, Pages 1672-1675

Procedure for fitting Monte Carlo calculated impact ionization coefficient to experiment

(2) Ershov, M a Ryzhii, V a

a UNIVERSITY OF AIZU (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; ELECTRIC FIELDS; ELECTRONS; ENERGY GAP; MATHEMATICAL MODELS; MONTE CARLO METHODS; OPTIMIZATION; PHONONS; SCATTERING; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS;

CARRIER DISTRIBUTION FUNCTION; DENSITY OF STATES; ENERGY RELAXATION RATE; IMPACT IONIZATION; PREEXPONENTIAL FACTOR; THRESHOLD ENERGY;

IONIZATION;

EID: 0028493191 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.357707 Document Type: Article

Times cited : (6)

References (24)

1
- 0004572817
- (1990) Phys. Rev. B , vol.41 , pp. 12122
- Sano, N.¹ Aoki, T.² Tomizawa, M.³ Yoshii, A.⁴

2
- 0026116329
- (1991) IEEE Trans. Electron Devices , vol.38 , pp. 634
- Fischetti, M.V.¹

3
- 35949006799
- (1992) Phys. Rev. B , vol.45 , pp. 4171
- Sano, N.¹ Yoshii, A.²

4
- 36449005581
- (1992) J. Appl. Phys , vol.72 , pp. 3554
- Bude, J.¹ Hess, K.²

5
- 0024663115
- (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 930
- Higman, J.M.¹ Hess, K.² Hwang, C.G.³ Dutton, R.W.⁴

6
- 0345796622
- (1993) J. Appl. Phys , vol.74 , pp. 5859
- Imanaga, S.¹ Hane, K.² Hayafuji, Y.³

7
- 84951379518
- Nara, 1993 (Business Center for Academic Societies Japan, Tokyo)
- (1993) Proceedings of the International Workshop on VLSI Process and Device Modeling , pp. 102
- Fiegna, C.¹ Iwai, H.² Kimura, T.³ Nakamura, S.⁴ Sangiorgi, E.⁵ Ricco, B.⁶

8
- 36449005145
- (1993) Appl. Phys. Lett , vol.62 , pp. 3339
- Cartier, E.¹ Fischetti, M.V.² Eklund, E.A.³ McFeely, F.R.⁴

9
- 0008578423
- (1965) Sov. Phys. JETP , vol.21 , pp. 1135
- Keldysh, L.V.¹

10
- 0007688657
- (1989) J. Appl. Phys , vol.65 , pp. 4279
- Cheng, Y.-Z.¹ Tang, T.-w.²

11
- 4243195731
- (1989) Jpn. J. Appl. Phys , vol.28 , pp. L2313
- Sonoda, K.¹ Inoue, Y.² Taniguchi, K.³ Hamaguchi, C.⁴

12
- 0001421578
- (1985) J. Appl. Phys , vol.57 , pp. 302
- Chang, C.¹ Hu, C.² Brodersen, R.W.³

13
- 0022013081
- (1985) J. Appl. Phys , vol.57 , pp. 1214
- DiMaria, D.J.¹ Theis, T.N.² Kirtley, J.R.³ Pesavento, F.L.⁴ Dong, D.W.⁵ Brorson, S.D.⁶

14
- 0027559031
- (1993) IEEE Trans. Electron Devices , vol.40 , pp. 619
- Fiegna, C.¹ Sangiorgi, E.²

15
- 0025442415
- (1990) Solid-State Electron , vol.33 , pp. 705
- Maes, W.¹ De Meyer, K.² Van Overstraten, R.³

16
- 0023287664
- (1987) Semicond. Sci. Technol , vol.2 , pp. 116
- Ridley, B.K.¹

17
- 35949025517
- (1983) Rev. Mod. Phys , vol.55 , pp. 645
- Jacoboni, C.¹ Reggiani, L.²

18
- 35949009958
- (1988) Phys. Rev. B , vol.38 , pp. 9721
- Fischetti, M.V.¹ Laux, S.E.²

19
- 0028403893
- (1994) Jpn. J. Appl. Phys , vol.33 , pp. 1365
- Ershov, M.¹ Ryzhii, V.²

20
- 0014778389
- (1970) Solid-State Electron , vol.13 , pp. 583
- Van Overstraten, R.¹ De Man, H.²

21
- 36149012386
- (1958) Phys. Rev , vol.109 , pp. 1537
- Chynoweth, A.G.¹

22
- 0020826266
- (1983) J. Appl. Phys , vol.54 , pp. 5139
- Tang, J.Y.¹ Hess, K.²

23
- 36448999439
- (1991) J. Appl. Phys , vol.70 , pp. 1493
- Vogelsang, T.¹ Hänsch, W.²

24
- 0002861764
- (1961) Solid-State Electron , vol.2 , pp. 35
- Shockley, W.¹

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