Hardness Variability in Commercial Technologies

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2536-2543

  Shaneyfelt, M R ^a   Winokur, P S ^a   Meisenheimer, T L ^a   Sexton, F W ^a   Roeske, S B ^a   Knoll, M G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; LOGIC GATES; PROM; RADIATION EFFECTS; RADIATION SHIELDING; RANDOM ACCESS STORAGE; SPACE APPLICATIONS; STANDARDS;

FLOATING GATES; QUALIFIED MANUFACTURER'S LIST;

SEMICONDUCTOR STORAGE;

EID: 0028714349     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340613     Document Type: Article

References (20)

1. MIL-I-38535B, “General Specification for Integrated Circuits (Microcircuits) Manufacturing,” dated June 1993,
2. P. S. Winokur, F. W. Sexton, D. M. Fleetwood, M. D. Terry, M. R. Shaneyfelt, P.V. Dressendorfer, and J. R. Schwank, “Implementing QML for Radiation Hardness Assurance,” IEEE Trans. Nucl. Sci. 37, 1794–1805 (1990).
3. D. R. Alexender, “Implications of Qualified Manufactur. ers List Reliability Procedures for Radiation Hardness Assurance,” IEEE NSREC Short Course, Reno, NV, July 16,1990.
4. R. A. Cliff, V. Danchenko, E. G. Stassinopoulos, M. Sing, G. J. Bucker, and R. S. Ohanian, “Prediction and Measurement of Radiation Damage to CMOS Devices on Board Spacecraft, IEEE TRans. Nucl. Sci. NS23, 1781 (1976)
5. J. H. Adams, Jr., “The Variability of Single Event Upset Rates in the Natural Environment,” IEEE Trans. Nucl. Sci. NS30, 4475 (1983)
6. M. R. Shaneyfelt, K. L. Hughes, J. R. Schwank, F. W. Sexton, D. M. Fleetwood, P. S. Winokur, and E. W. Enlow, “Wafer-Level Radiation Testing for Hardness Assurance,” IEEE Trans. Nucl. Sci. NS38, 1598 (1991)
7. T. F. Wrobel, “Radiation Characterization of a 28C256 EEPROM,” IEEE Trans. Nucl. Sci. NS36, 2247 (1989)
8. M. E. Bumbaugh, and D. S. Rosario, “Ionizing Radiation Effects on Commercial 256K EEPROM’s,” IEEE Radia tion Effects Data Workshop, 42 (1993).
9. P. S. Winokur, K. G. Kerris, and L. Harper, “Predicting CMOS Inverter Response in Nuclear and Space Environments,” IEEE Trans. Nucl. Sci. NS30, 4326 (1983).
10. G. E Derbenwick and H. H. Sander, “CMOS Hardness Prediction for Low-Dose-Rate Environments,” IEEE Trans. Nucl. Sci. NS24, 2244 (1977).
11. D. M. Fleetwood, P. S. Winokur, and T. L. Meisenheimer, “Hardness Assurance for Low-Dose Space Applications,” IEEE Trans. Nucl. Sci. NS38, 1552(1991).
12. F. W. Sexton, D. M. Fleetwood, C. C. Aldridge, G. Garrett, J. C. Pelletier, and J.I. Gaona, Jr., “Qualifying Commercial ICs for Space Total-Dose Environments,” IEEE Trans. Nucl. Sci. NS39, 1869 (1992).
13. J. M. Terrell, T. R. Oldham, A. J. Lelis, and H. E. Boesch, Jr., “Time Dependent Annealing of Radiation-Induced Leakage Currents in MOS Devices, IEEE Trans. Nucl. Sci. NS36, 2205 (1989).
14. T. R. Oldham, A. J. Lelis, H. E. Boesch, Jr., J. M. Benedetto, F. B. McLean, and J. M. McGarrity, “PostIrradiation Effects in Field-Oxide Isolation Structures.” IEEE Trans. Nucl. Sci. NS34, 1184 (1987).
15. J. R. Schwank, F. W. Sexton, D. M. Fleetwood. M. R. Shaneyfelt, K. L. Hughes, and M. S. Rodgers, “Strategies for Lot Acceptance Testing Using CMOS Transistors and ICs,” IEEE Trans. Nucl. Sci. NS36, 1971 (1989).
16. F. W. Sexton and J. R. Schwank, “Correlation of Radiation Effects in Transistors and Integrated Circuits,” IEEE Trans. Nucl. Sci. NS32, 3975 (1985).
17. M. R. Shaneyfelt, D. M. Fleetwood, P. S. Winokur, J. R. Schwank, and T. L. Meisenheimer, “Effects of Device Scaling and Geometry on MOS Radiation Hardness Assurance,” IEEE Trans. Nucl. Sci. NS40, 1678 (1993).
18. J. Scarpulla, A. L. Amram, V. W. Gin, T. C. Morse, and K. T. Nakamura, “Gate Size Dependence of the Radiation-Produced Charges in Threshold Voltage, Mobility, and Interface State Density in Bulk CMOS,” IEEE Trans. Nucl. Sci. NS39, 1990 (1992).
19. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contribution to Device Rebound.” IEEE Trans. Nucl. Sci. NS31, 1434 (1984).
20. N. S. Saks, C. M. Dozier, and D. B. Drown, “Time Dependence of Interface Trap Formation in MOSFETs Following Pulsed Irradaition,” IEEE Trans. Nucl. Sci. NS35, 1168 (1988).