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Applied Physics Letters
Volumn 54, Issue 6, 1989, Pages 555-557
Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0000650812     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.100929     Document Type: Article
Times cited : (85)
References (15)
  • 8
    • 84952847671 scopus 로고    scopus 로고
    • The 10 min soak step was inadvertently omitted from the original procedure in Ref. 1.
  • 14
    • 84952847666 scopus 로고    scopus 로고
    • For average photon energy of [formula omitted] the [formula omitted] can be converted to [formula omitted] The fitted [formula omitted] for sulfuric-peroxide, [formula omitted] and [formula omitted] are, respectively, [formula omitted] [formula omitted] and [formula omitted] If the trapping level [formula omitted] is at the same energy position in all three cases, then these [formula omitted] can be used to derive reasonable SRVs for [formula omitted] surface recombination.
  • 15
    • 84952847669 scopus 로고    scopus 로고
    • In fact, the behavior of SRV as a function of injection reported in Ref. 1 cannot be obtained without fixed charge and further implies that the donor-like trap density in the band gap must be ≺ fixed charge. These statements will be justified in Ref. 13.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.