Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

Journal of Applied Physics

Volumn 47, Issue 3, 1976, Pages 1131-1133

  Wessels, Bruce W ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - JUNCTIONS;

GALLIUM PHOSPHIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0016931568     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.322695     Document Type: Article

References (9)