75-GHz fT SiGe-Base Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 11, Issue 4, 1990, Pages 171-173

  Patton, Gary L ^a   Comfort, James H ^a   Meyerson, Bernard S ^a   Crabbé, Emmanuel F ^a   Scilla, Gerald J ^a   De Frésart, Edouard ^a   Stork, Johannes M C ^a   Sun, Jack Y C ^a   Harame, David L ^a   Burghartz, Joachim N ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

DRIFT FIELD; INTRINSIC TRANSIT TIME; POLY-EMITTER BIPOLAR PROCESS; SILICON HETEROJUNCTION BIPOLAR TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0025419030     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.61782     Document Type: Article

References (14)

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