A New Approach to Optimizing the Base Profile for High-Speed Bipolar Transistors

IEEE Electron Device Letters

Volumn 11, Issue 4, 1990, Pages 149-152

  Van Wijnen, Paul J ^a   Gardner, Robert D ^a  

^a Philips Signetics Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION;

BASE PROFILE; GRADED-BASE TRANSISTORS; HIGH-SPEED BIPOLAR TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0025419028     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.61777     Document Type: Article

References (9)

1. J. Lindmayer and C. Wrigley, Fundamentals of Semiconductor Devices. Huntingdon, NY: Robert E. Krieger, 1965, chs. 5 and 7.
2. D. K. Ferry, L. A. Akers, and E. W. Greeneich, Ultra Large Scale Integrated Microelectronics. Englewood Cliffs, NJ: Prentice-Hall, 1988, ch. 3.
3. A. B. Phillips, Transistor Engineering. Malabar, FL: Robert E. Krieger, 1981, ch. 8.
4. K. H. Weiner and T. W. Sigmon, “Emitter and base fabrication in advanced bipolar transistors using gas immersion laser doping,” in Proc. IEEE Bipolar Circuits & Technology Meeting, 1988, p. 37.
5. B. van Schravendijk, J. L. de Jong, J. G. de Groot, and P. Maillot, “Thin base formation by double diffused polysilicon technology,” in Proc. IEEE Bipolar Circuits & Technology Meeting, 1988, p. 132.
6. J. J. H. van de Biesen, “A simple regional analysis of transit times in bipolar transistors,” Solid-State Electron., vol. 29, no. 5, p. 529, 1986.
7. J. W. Slotboom, “Analysis of bipolar transistors,” Thesis, Tech. Univ. Eindhoven, The Netherlands, 1977.
8. J. W. Slotboom and H. C. de Graaff, “Measurements of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, p. 857, 1976.
9. S. Szeto and R. Reif, “Reduction of fT by nonuniform base bandgap narrowing,” IEEE Electron Device Lett., vol. 10, no. 8, p. 341, 1989.