Design and modeling of a new silicon-based tunneling field-effect transistor

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1441-1447

  Zhang, Wei E ^a,b   Wang, Fu Cheng ^b   Yang, C H ^b  

^a IEEE

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CHANNEL LENGTH; TRANSISTOR STRUCTURE; TUNNELING CURRENT; TUNNELING FIELD EFFECT TRANSISTOR;

MOSFET DEVICES;

EID: 0030241607     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535330     Document Type: Article

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