Ultra-Deep Submicron Si MOSFETs with fr Exceeding 100 GHz

Optics InfoBase Conference Papers

Volumn , Issue , 1993, Pages 60-64

  Yan, R H ^a   Lee, K F ^a   Kim, Y O ^a   Jeon, D Y ^a   Tennant, D M ^a   Westerwick, E H ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; MOSFET DEVICES;

100 GHZ; CURRENT GAIN CUTOFF FREQUENCY; GATE-LENGTH; INTEGRATION REQUIREMENTS; POLYSILICON GATES; SI MOSFET; TURN OFFS; ULTRA DEEP SUBMICRON; VERYLARGE-SCALE INTEGRATIONS (VLSI);

VLSI CIRCUITS;

EID: 85136146115     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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4. M. Nanba, et al., "A 64GHz Si Bipolar Transistor Using In-Situ Phosphorus Doped Polysilicon Emitter Technology" IEDM Tech. Dig., 1991, pp. 443-446.
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6. R. H. Yan, et al., "Scaling the Si MOSFET into the 0.1-μm Regime Using Vertical Doping Engineering", Appl. Phys. Lett., 59, pp.3315-3317, Dec. 1991.
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10. R. H. Yan, et al., "High Performance 0.1-μm Room Temperature Si MOSFETs", 1992 Sym. VLSI Tech. Tech. Dig., pp.86-87.