GATE OXIDE THINNING LIMIT INFLUENCED BY GATE MATERIALS.

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1985, Pages 22-23

  Itsumi, Manabu ^a   Muramoto, Susumu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SEMICONDUCTING SILICON;

CMOS TECHNOLOGY; DIGEST OF PAPER; ULTRATHIN GATE OXIDE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022327327     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)