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Volumn 81, Issue 5, 1993, Pages 682-689

Future CMOS Scaling and Reliability

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; MOSFET DEVICES; RANDOM ACCESS STORAGE; RELIABILITY;

EID: 0027594079     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/5.220900     Document Type: Article
Times cited : (138)

References (16)
  • 1
    • 0016116644 scopus 로고
    • Design of ion-implanted MOSFET’s with very small physical dimensions
    • Oct.
    • R. H. Dennard et al., “Design of ion-implanted MOSFET’s with very small physical dimensions,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 256–268, Oct. 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.SC-9 , pp. 256-268
    • Dennard, R.H.1
  • 2
    • 0018480027 scopus 로고
    • Characteristics and limitation of scaled-down MOSFET’s due to two dimensional field effect
    • vol. ED-26 June 1979. [3] Y. El-Mansy, “MOS device and technology constraints in VLSI IEEE Trans. Electron Devices Apr.
    • H. Masuda, M. Nakai, and M. Kubo, “Characteristics and limitation of scaled-down MOSFET’s due to two dimensional field effect,” IEEE Trans. Electron Devices, vol. ED-26, pp. 980–986, June 1979. [3] Y. El-Mansy, “MOS device and technology constraints in VLSI,” IEEE Trans. Electron Devices, vol. ED-19, pp. 567–573, Apr. 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-19 , pp. 980-986
    • Masuda, H.1    Nakai, M.2    Kubo, M.3
  • 3
    • 0025432892 scopus 로고
    • Choice of power supply voltage for half-micrometer and lower submi-crometer CMOS devices
    • May
    • M. Kakumu, M. Kinugawa, and K. Hashimoto, “Choice of power supply voltage for half-micrometer and lower submi-crometer CMOS devices,” IEEE Trans. Electron Devices, vol. 37, pp. 1334–1342, May 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1334-1342
    • Kakumu, M.1    Kinugawa, M.2    Hashimoto, K.3
  • 4
    • 0026117393 scopus 로고
    • Performance and reliability design issues of deep submicron MOSFET
    • Mar.
    • J. E. Chung, M. C. Jeng, J. E. Moon, P. K. Ko, and C. Hu, “Performance and reliability design issues of deep submicron MOSFET,” IEEE Trans. Electron Devices, vol. 38, pp. 545–554, Mar. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 545-554
    • Chung, J.E.1    Jeng, M.C.2    Moon, J.E.3    Ko, P.K.4    Hu, C.5
  • 5
    • 84941509962 scopus 로고
    • IV characteristics of submicron MOSFETs
    • N. G. Einspruch, EdAquadNew York: Academic
    • P. Ko, “IV characteristics of submicron MOSFETs,” ch. 1 in Advanced MOS Device Physics, N. G. Einspruch, EdAquad New York: Academic, 1989.
    • (1989) ch. 1 in Advanced MOS Device Physics
    • Ko, P.1
  • 7
    • 84941498547 scopus 로고    scopus 로고
    • Design for suppression of gate-induced drain leakage in LDD MOSFETs
    • S. Parke, J. Moon, P. Lee, J. Huang, C. Hu, and P. K. Ko, “Design for suppression of gate-induced drain leakage in LDD MOSFETs,”
    • Parke, S.1    Moon, J.2    Lee, P.3    Huang, J.4    Hu, C.5    Ko, P.K.6
  • 8
    • 84945713471 scopus 로고
    • Hot-electron induced MOSFET degradation—Model, monitor, improvement
    • Feb.
    • C. Hu, S. Tam, F.-C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Kyle, “Hot-electron induced MOSFET degradation—Model, monitor, improvement,” IEEE Trans. Electron Devices, vol. ED-32, pp. 375–385, Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 375-385
    • Hu, C.1    Tam, S.2    Hsu, F.-C.3    Ko, P.K.4    Chan, T.Y.5    Kyle, K.W.6
  • 9
    • 0022890869 scopus 로고
    • An analytical perspective of LDD MOSFETs
    • May —62. K. Mayaram, J. Lee, T. Y. Chan, and C. Hu
    • K. Mayaram, J. Lee, T. Y. Chan, and C. Hu, “An analytical perspective of LDD MOSFETs,” in Proc. IEEE Symp. VLSI Technol., May 1986, pp. 61—62.
    • (1986) Proc. IEEE Symp. VLSI Technol , pp. 61
  • 10
    • 0025464151 scopus 로고
    • Projecting gate oxide reliability and optimizing bum-in
    • July
    • R. Moazzami and C. Hu, “Projecting gate oxide reliability and optimizing bum-in,” IEEE Trans. Electron Devices, vol. 37, pp. 1643–1650, July 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1643-1650
    • Moazzami, R.1    Hu, C.2
  • 11
    • 0025435021 scopus 로고
    • Projecting interconnect electromigration lifetime for arbitrary current waveforms
    • May
    • B. Liew, N. Cheung, and C. Hu, “Projecting interconnect electromigration lifetime for arbitrary current waveforms,” IEEE Trans. Electron Devices, vol. 37, pp. 1343–1351, May 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1343-1351
    • Liew, B.1    Cheung, N.2    Hu, C.3
  • 12
    • 0025661855 scopus 로고
    • Evolution of VLSI reliability engineering
    • Mar.
    • D. L. Crook, “Evolution of VLSI reliability engineering,” in Proc. Int. Rel. Phys. Symp., Mar. 1990, pp. 2–11.
    • (1990) Proc. Int. Rel. Phys. Symp , pp. 2-11
    • Crook, D.L.1
  • 13
    • 0026837902 scopus 로고
    • IC reliability simulation
    • Mar.
    • C. Hu, “IC reliability simulation,” IEEE J. Solid State Circuits, pp. 241–246, Mar. 1992.
    • (1992) IEEE J. Solid State Circuits , pp. 241-246
    • Hu, C.1
  • 16
    • 84941503869 scopus 로고    scopus 로고
    • Box 4868, Santa Clara, CA 95054
    • BTA, P.O. Box 4868, Santa Clara, CA 95054.
    • Bta, P.O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.