Analysis of local and global transient effects in a CMOS SRAM

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 899-906

  Gardic, F ^a   Musseau, O ^a   Flament, O ^a   Brisset, C ^a   Ferlet Cavrois, V ^a   Martinez, M ^a   Corbiere T ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; RADIATION EFFECTS; RANDOM ACCESS STORAGE;

SINGLE EVENT EFFECTS; STATIC RANDOM ACCESS MEMORY (SRAM);

CMOS INTEGRATED CIRCUITS;

EID: 0030168712     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510731     Document Type: Article

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