Dose-rate upset patterns in a 16K CMOS SRAM

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1541-1545

  Massengill, L W ^a   Diehl, S E ^a   Browning, J S ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79958073840     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334638     Document Type: Article

References (4)

1. See, for example, M.A. Rose, “Radiation Effects and Hardening Techniques,” 1984 IEEE Tutorial Short Course on Radiation Effects, July 1984.
2. L.W. Massengill and S.E. Diehl-Nagle, “Transient Radiation Upset Simulations of CMOS Memory Circuits,” IEEE Trans. on Nuclear Science, vol. NS-31, no. 6, Dec. 1984.
3. L.W. Massengill, S.E. Diehl-Nagle, and T.F. Wrobel, “Analysis of Transient Radiation Upset in a 2k SRAM,” IEEE Trans. on Nuclear Science, vol. NS-32, no. 6, Dec. 1985.
4. G. Brucker, REC, private communication.