Transient Radiation Upset Simulations of Cmos Memory Circuits

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1337-1343

  Massengill, Lloyd W ^a   Diehl Nagle, Sherra E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION EFFECTS - COMPUTER SIMULATION;

CMOS MEMORY CIRCUITS; PHOTOCURRENT GENERATION; RAIL SPAN COLLAPSE; TRANSIENT RADIATION UPSET SIMULATIONS;

DATA STORAGE, SEMICONDUCTOR;

EID: 0021596157     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333507     Document Type: Article

References (5)

1. J.L. Wirth and S.C. Rogers, “The Transient Response of Transistors and Diodes to Ionizing Radiation,” IEEE-Trans. on Nuclear Science, NS-11, 11, pp. 24–38, Nov. 1964.
2. R.P. Donovan, J.R. Hauser, and M. Simons, “A Survey of the Vulnerability of Contemporary Semi-conductor Components to Nuclear Radiation,” Technical Report AFAL-TR-74-61, June 1974, Air Force Avionics Laboratory, Wright-Patterson Air Force Base, Ohio.
3. D.M. Long, J.R. Florian, and R.H. Casey, “Transient Response Model for Epitaxial Transistors,” IEEE Trans. on Nuclear Science, NS-30, 30, pp. 4131–4134, Dec. 1983.
4. Sandia National Laboratories data files.
5. To be published.