Factors contributing to CMOS static RAM upset

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1524-1529

  Ackermann, M R ^a   Mikawa, R E ^a   Massengill, L W ^b   Diehl, S E ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939023816     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334635     Document Type: Article

References (8)

1. J.L. Wirth and S.C. Rogers, IEEE Trans. Nucl. Sci., NS-11, pp. 24–38, Nov. 1964.
2. L.W. Massengill and S.E. Diehl-Nagle, IEEE Trans. Nucl. Sci., Vol. NS-31, No. 6, pp. 1337–1343, Dec. 1984.
3. L.W. Massengill, S.E. Diehl-Nagle, T.F. Wrobel, IEEE Trans. Nucl. Sci., Vol. NS-32, No. 6, pp. 4026–4030, Dec. 1985.
4. L.W. Massengill and S.E. Diehl-Nagle, Government Microcircuit Applications Conference Digest of Papers, vol. X, Nov. 1984.
5. Internal report from L.W. Massengill to P.V. Dressendorfer and A. Ochoa, Sandia National Laboratories, July, 1984.
6. R.C. Hughes, E.P. EerNisse, H.J. Stein, IEEE Trans. Nucl. Sci., Vol. Ns-22, No. 6, pp. 2227–2233, Dec. 1975.
7. D.M. Long, J.R. Florian, R.H. Casey, IEEE Trans. Nucl. Sci., Vol. NS-30, No. 6, pp. 4131–4134, Dec. 1983.
8. J.S. Browning, unpublished data. To be published as Sandia National Laboratories technical report on SA3240.