Epitaxial Aluminum‐Doped Zinc Oxide Thin Films on Sapphire: II, Defect Equilibria and Electrical Properties

Journal of the American Ceramic Society

Volumn 78, Issue 7, 1995, Pages 1935-1939

  Srikant, V ^a   Sergo, Valter ^a   Clarke, David R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFUSION; DOPING (ADDITIVES); SAPPHIRE; SUBSTRATES; SURFACE PHENOMENA; THIN FILMS; ZINC OXIDE;

SURFACE ORIENTATION;

EPITAXIAL GROWTH;

EID: 0029336309     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1995.tb08913.x     Document Type: Article

References (19)

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8. The Sublimation of Basal Surfaces of Zinc Oxide
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10. Measurement and Calculation of the Carrier Concentration in Polycrystalline Germanium Thin Films
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13. Determination of Grain Boundary Defect‐State Densities from Transport Measurements
14. Resistivity Anomaly in Doped Barium Titanate
15. Some Aspects of Semiconducting Barium Titanate