Oxidic field effect structures with memory

Materials Research Society Symposium - Proceedings

Volumn 401, Issue , 1996, Pages 163-170

  Wolf, R M ^a   Cillessen, J F M ^a   Giesbers, J B ^a   Pastoor, E ^a   Muller, G ^a   Grosse Holz, K O ^a   Blom, P W M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LANTHANUM COMPOUNDS; OXIDES; POLARIZATION; PROBABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS;

BISTABLE POLARIZATION; FERROELECTRIC FIELD EFFECT TRANSISTOR; FERROELECTRIC SCHOTTKY DIODE; GATE PULSE MEASUREMENTS; LEAD TITANATE; OXIDIC FIELD EFFECT STRUCTURES; SWITCHING MEMORY; TUNNEL PROBABILITY;

THIN FILM DEVICES;

EID: 0029776311     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)