Strain relaxation in GeSi layers with uniform and graded composition

Microelectronic Engineering

Volumn 15, Issue 1-4, 1991, Pages 131-134

  Jain, S C ^a   Balk, P ^a   Goorsky, M S ^b   Iyer, S S ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - GROWTH;

INTER-DISLOCATION SPACING; MATTHEWS AND BLAKESLEE RELATION; MBE GROWN LAYERS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0026239325     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(91)90197-L     Document Type: Article

References (5)