A Selective SiO2 Film-Formation Technology Using Liquid-Phase Deposition for Fully Planarized Multilevel Interconnections

Journal of the Electrochemical Society

Volumn 140, Issue 8, 1993, Pages 2410-2414

  Homma, Tetsuya ^a   Katoh, Takuya ^a   Yamada, Yoshiaki ^a   Murao, Yukinobu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC WIRING; FILM PREPARATION; INORGANIC ACIDS; PHOTORESISTS; SILICA; SILICONES; SOLUTIONS; SUBSTRATES; THIN FILMS; TUNGSTEN;

FULLY PLANARIZED MULTILEVEL INTERCONNECTIONS; LIQUID PHASE DEPOSITION; POLYSILICON; VIA FILLING;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0027640654     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2220834     Document Type: Article

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