Two-dimensional images of CF2 density in CF4/Ar plasmas by laser-induced fluorescence in a GEC RF reference cell

IEEE Transactions on Plasma Science

Volumn 24, Issue 1, 1996, Pages 113-114

  McMillin, Brian K ^a   Zachariah, Michael R ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CARBON INORGANIC COMPOUNDS; CHARGE COUPLED DEVICES; ELECTRIC DISCHARGES; FLUORESCENCE; IMAGING TECHNIQUES; LASER BEAM EFFECTS; NEODYMIUM LASERS; OPTICAL VARIABLES MEASUREMENT; PLASMAS; PRESSURE EFFECTS;

GASEOUS ELECTRONIC CONFERENCE REFERENCE CELL; PLANAR LASER INDUCED FLUORESCENCE IMAGING;

PLASMA DENSITY;

EID: 0030087083     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.491738     Document Type: Article

References (5)

1. 4, J. Appl. Phys., and references therein, vol. 79, pp. 77-85, 1996.
2. [21 Plasma Etching - An Introduction, D. M. Manos and D. L. Flamm. Eds. Boston: Academic, 1989.
3. 4 etching plasmas in the GEC RF reference cell, in Proc. 12th Int. Symp. Plasma Chem., Minneapolis, MN, Aug. 21-25, 1995, pp. 539-544.
4. D. B. Oh, A. C. Stanton, H. M. Anderson, and M. P. Splichal, In situ diode laser absorption measurements of plasma species in a GEC reference cell reactor, J. Vacuum Sci. Technol. B, vol. 13. pp. 954-961, 1995.
5. 2 plasma etching of silicon, J. Vacuum Sci. Technol. A, vol. 8, pp. 1648-1653, 1990.