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Volumn 42, Issue 3, 1995, Pages 377-389

Silicon Bipolar Device Structures for Digital Applications: Technology Trends and Future Directions

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; TECHNOLOGICAL FORECASTING;

EID: 0029276716     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.368033     Document Type: Article
Times cited : (27)

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    • I. Post and P. Ashburn, “Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions,” IEEE Trans. Electron Devices, vol. 38, pp. 2442–2451, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 2442-2451
    • Post, I.1    Ashburn, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.