9.4-μm2 38-GHz sidewall polycide base bipolar (SPOTEC) with a half-micron CMOS technology for very-high-speed ULSIs

Proceedings of the 1993 Bipolar/Bicoms Circuits and Technology

Volumn , Issue , 1993, Pages 67-70

  Shiba, Takeo ^a   Tamaki, Yoichi ^a   Onai, Takahiro ^a   Saitoh, Masayoshi ^a   Kure, Tokuo ^a   Nakamura, Tohru ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; EMITTER COUPLED LOGIC CIRCUITS; FIELD EFFECT SEMICONDUCTOR DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

SIDEWALL POLYCIDE BASE BIPOLAR TECHNOLOGY;

ULSI CIRCUITS;

EID: 0027831979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)