A new concept for high-voltage SOI devices

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 1992-May, Issue , 1992, Pages 278-281

  Wondrak, W ^a   Held, R ^a   Stein, E ^a   Korec, J ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE THICKNESS; DOPING CONCENTRATION; HIGH VOLTAGE SOI DEVICES; LATERAL DEVICE; SILICON DIRECT BONDINGS; SILICON LAYER; THICK SOI;

SEMICONDUCTOR DEVICES;

EID: 84975400717     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991286     Document Type: Conference Paper

References (7)

1. B. J. Baliga IEEE-ED 38(7), 1568-1575 (1991)
2. A. Nakagawa, N. Yasuhara and Y. Baba IEEE-ED 38(7), 1650-1654 (1991)
3. W. Wondrak, E. Stein and R. Held Electrochem. Soc. Ext. Abstr. 91-2, pp 740-74
4. Y. S. Huang and B. J. Baliga Conf. Proc. ISPSD 1991, pp 27-30
5. S. Merchant, E. Arnold, H. Baumgart, S. Mukherjee, H. Stein and R. Pinker Conf. Proc. ISPSD 1991, pp 31-35
6. A. Nakagawa and T. Matsudai SSDM Ext. Abstr. 1991, pp 731-732
7. K. P. Brieger, W. Gerlach and J. Pelka Sol. St. Electron. 26(8), 739-745 (1983)